Gate Field Plate Structure for Subthreshold Swing Improvement of Si Line-Tunneling FETs
نویسندگان
چکیده
منابع مشابه
Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate
In this paper, a new Si/SiGe heterojunction tunneling field-effect transistor with a T-shaped gate (HTG-TFET) is proposed and investigated by Silvaco-Atlas simulation. The two source regions of the HTG-TFET are placed on both sides of the gate to increase the tunneling area. The T-shaped gate is designed to overlap with N+ pockets in both the lateral and vertical directions, which increases the...
متن کاملAn Analytical Subthreshold Current/swing Model for Junctionless Cylindrical Nanowire Fets
Based on the parabolic potential approach (PPA), scaling theory, and driftdiffusion approach (DDA) with effective band gap widening (BGW), we propose an analytical subthreshold current/swing model for junctionless (JL) cylindrical nanowire FETs (JLCNFETs). The work indicates that the electron density of Qm that is induced by the current factor minimum central potentialc,minand equivalen...
متن کاملAnalytical models for channel potential, threshold voltage, and subthreshold swing of junctionless triple-gate FinFETs
Analytical models for channel potential, threshold voltage, and subthreshold swing of the short-channel fin-shaped field-effect transistor (FinFET) are obtained. The analytical model results are verified against simulations and good agreements are observed. Analytical expressions for subthreshold swing, drain induced barrier lowering effect, and threshold voltage roll-off characteristics are pr...
متن کاملPerformance Study and Analysis of Heterojunction Gate All Around Nanowire Tunneling Field Effect Transistor
In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details. The proposed device has been structured using Germanium for source regionand Silicon for channel and drain regions. Kane's band-to-band tunneling model hasbeen used to account for the amount of band-to...
متن کاملStructure-Dependent Subthreshold Swings for Double-gate MOSFETs
583 Abstract— In this paper, subthreshold swing characteristics have been presented for double-gate MOSFETs, using the analytical model based on series form of potential distribution. Subthreshold swing is very important factor for digital devices because of determination of ON and OFF. In general, subthreshold swings have to be under 100mV/dec. The channel length L g is varied from 30nm to 100...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Access
سال: 2019
ISSN: 2169-3536
DOI: 10.1109/access.2019.2928692